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| STS25NH3LL N-channel 30 V - 0.0032 - 25 A - SO-8 STripFETTM III Power MOSFET for DC/DC conversion Features Type STS25NH3LL VDSS 30 V RDS(on) ID <0.0035 25 A (1) 1. This value is rated according to Rthj-pcb Optimal RDS(on) x Qg trade off @ 4.5 V Conduction losses reduced Switching losses reduced SO-8 Applications Switching applications Figure 1. Internal schematic diagram Description This device utilizes the advanced design rules of ST's proprietary STripFETTM technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low voltage Power MOSFET in an SO-8 package. The device is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed. Table 1. Device summary Marking 25H3LL Package SO-8 Packaging Tape & reel Order code STS25NH3LL November 2007 Rev 10 1/11 www.st.com 11 Electrical ratings STS25NH3LL 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID IDM(2) PTOT (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Value 30 18 25 18 100 3.2 Unit V V A A A W 1. This value is rated according to Rthj-pcb 2. Pulse width limited by safe operating area Table 3. Symbol Rthj-pcb (1) Tj Tstg Thermal data Parameter Thermal resistance junction-amb max Operation junction temperature Storage temperature Value 47 -55 to 175 Unit C/W C 1. When mounted on FR-4 board of 1 inch, 2 oz Cu, t< 10 sec Table 4. Symbol IAV EAS Avalanche characteristics Parameter Not-repetitive avalanche current (pulse width limited by Tj max.) Single pulse avalanche energy (starting Tj = 25 C, ID = IAV, VDD = 24 V) Value 12.5 1.3 Unit A J 2/11 STS25NH3LL Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 18 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 12.5 A VGS= 4.5 V, ID= 12.5 A 1 0.0032 0.0035 0.004 0.005 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd QOSS (2) RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Output charge Gate input resistance Test conditions VDS = 10 V, ID = 12.5 A VDS =25 V, f = 1 MHz, VGS = 0 VDD = 15 V, ID = 25 A VGS = 4.5 V Figure 14 VDD= 24 V, VGS = 0 f = 1 MHz, gate DC bias =0 test signal level = 20 mV open drain 1 Min. Typ. 30 4450 655 50 30 12.5 10 23 2 3 40 Max. Unit S pF pF pF nC nC nC nC 1. Pulsed: pulse duration=300 s, duty cycle 1.5% 2. QOSS = Coss * Vin, Coss = Cgd + Cds 3/11 Electrical characteristics STS25NH3LL Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 15 V, ID = 12.5 A, RG= 4.7 , VGS = 10 V Figure 13 Min. Typ. 18 50 75 8 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, VGS = 0 ISD = 25 A, di/dt = 100 A/s, VDD = 25 V, TJ = 150 C Figure 18 32 34 2.1 Test conditions Min Typ. Max 25 100 1.3 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5% 4/11 STS25NH3LL Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 5/11 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations STS25NH3LL Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 6/11 STS25NH3LL Test circuit 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 7/11 Package mechanical data STS25NH3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STS25NH3LL Package mechanical data SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 9/11 Revision history STS25NH3LL 5 Revision history Table 9. Date 19-Nov-2007 Document revision history Revision 10 Changes Document status promoted from preliminary data to datasheet 10/11 STS25NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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